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--- vlsi:history [24/07/2014 01:16]
pacher
+++ vlsi:history [24/07/2014 02:36] (versione attuale)
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@@ Linea 5: / Linea 5: @@
 First microelectronics activities in Turin started in the early '90s with contributions
 of the //[[Giancarlo Bonazzola]]//'s group to the development of the front-end electronics
-chip named FABRIC [1] devoted to the readout of the silicon strips of the **NA50** experiment at CERN.
+chip named **FABRIC** [1] devoted to the readout of the silicon strips of the **NA50** experiment at CERN.
 The first chip prototype entirely designed using local resources only, named **TOA16** (a 16 channels
 chip for the read out of silicon microstrip detectors for particle tracking) has been produced in 1994.
@@ Linea 15: / Linea 15: @@
-[1] //Fast bipolar front-end for binary readout of silicon strip detectors//   \\
+\\
+**References** \\
+====== FABRIC and CPD  ======
+FABRIC chip (Wladyslaw Dabrowsk, Giancarlo Bonazzola)
+   * full-custom bipolar bipolar process by Tektronix
+   * 64 channels (one channel per strip)
+   * binary readout
+   * analog amplification/shaping + DISC (hit/no hit)
+CPD (Clock Driven Pipeline) chip (Joel DeWitt) [2]
+   * CMOS
+   * RAM-based digital readout for FABRIC outputs
+//Design and testing of fast, low-power, low-noise amplifier-comparator VLSI circuits// 1992
+//Radiation hardness measurements on components of a full custom bipolar process// 1993 \\
+[1] //Fast bipolar front-end for binary readout of silicon strip detectors// 1993   \\
 W. Dabrowski, G. Bonazzola, P. De Remigis, P. Giubellino   \\
 [[http://cds.cern.ch/record/261878/files/ppe-94-055.pdf]]
+[2] //A pipeline and bus interface chip for silicon strip detector read out// 1993 \\
+J. DeWitt   \\
+[[http://www.researchgate.net/publication/224271964_A_Pipeline__Bus_Interface_Chip_For_Silicon_Strip_Detector_Read-out]]
+//A fast high-granularity silicon multiplicity detector for the NA50 experiment at CERN//
+//Radiation damage of silicon strip detectors in the NA50 experiment//
+//DEVELOPMENT OF THE SILICON MULTIPLICITY DETECTOR FOR THE NA50 EXPERIMENT AT CERN//
+====== The OLA chip ======
+Technology: SHPi full-custom bipolar process by Tektronix
+//OLA, A low-noise bipolar amplifier for the readout of silicon drift detectors// 1995 \\
+W. Dabrowski, W. Bialas, G. Bonazzola, V. Bonvicini, F. Ceretto, P. Giubellino, M. Idzik,
+M. Prest, L. Riccati, N. Zampa
+//Low-noise monolithic bipolar front-end for silicon drift Detectors// 1999   \\
+W. Bialas, G. Bonazzola, W. Bonvicini, L. Casati, F. Ceretto, P. Giubellino,
+M. Prest, L. Riccati and N. Zampa
+//Design and operation of a fast high-granularity silicon detector system in a high-radiation environment// 1998
+====== TERA 1.0 ======
+[[http://totlxl.to.infn.it/NewSite/vlsi_chip.html]]
-W. Dabrowski, Joel DeWitt FABRIC
+   * CMOS 1.8 um technology
+   * 14 channels
+Several version of the ASIC have been already designed and used since 1996.
-//The silicon multiplicity detector for the NA50 experiment at CERN//
+//Performances of a VLSI wide dynamic range current-to-frequency
+converter for strip ionisation chambers// 1997   \\
+G. Bonazzola, R. Cirio, M. Donetti, F. Marchetto, G. Mazza, C. Peroni and A. Zampieri \\
 ====== ======
@@ Linea 31: / Linea 104: @@
 ----
-Last update: [[pacher@NOSPAMto.infn.it|Luca Pacher]] - Jun 9, 2013
+Last update: [[pacher@NOSPAMto.infn.it|Luca Pacher]] - Jul 23, 2014
+~~NOTOC~~