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vlsi:history [24/07/2014 01:38] pacher |
vlsi:history [24/07/2014 02:36] (versione attuale) pacher |
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First microelectronics activities in Turin started in the early '90s with contributions | First microelectronics activities in Turin started in the early '90s with contributions | ||
of the //[[Giancarlo Bonazzola]]//'s group to the development of the front-end electronics | of the //[[Giancarlo Bonazzola]]//'s group to the development of the front-end electronics | ||
- | chip named FABRIC [1] devoted to the readout of the silicon strips of the **NA50** experiment at CERN. | + | chip named **FABRIC** [1] devoted to the readout of the silicon strips of the **NA50** experiment at CERN. |
The first chip prototype entirely designed using local resources only, named **TOA16** (a 16 channels | The first chip prototype entirely designed using local resources only, named **TOA16** (a 16 channels | ||
chip for the read out of silicon microstrip detectors for particle tracking) has been produced in 1994. | chip for the read out of silicon microstrip detectors for particle tracking) has been produced in 1994. | ||
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- | ====== FABRIC ====== | + | ====== FABRIC and CPD ====== |
- | FABRIC chip = analog preamp + DISC (Wladyslaw Dabrowsk, G. Bonazzola) | + | FABRIC chip (Wladyslaw Dabrowsk, Giancarlo Bonazzola) |
- | CPD (Clock Driven Pipeline) chip = digital (Joel DeWitt) [2] | + | * full-custom bipolar bipolar process by Tektronix |
+ | * 64 channels (one channel per strip) | ||
+ | * binary readout | ||
+ | * analog amplification/shaping + DISC (hit/no hit) | ||
+ | |||
+ | |||
+ | CPD (Clock Driven Pipeline) chip (Joel DeWitt) [2] | ||
+ | |||
+ | * CMOS | ||
+ | * RAM-based digital readout for FABRIC outputs | ||
//Design and testing of fast, low-power, low-noise amplifier-comparator VLSI circuits// 1992 | //Design and testing of fast, low-power, low-noise amplifier-comparator VLSI circuits// 1992 | ||
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+ | //Radiation hardness measurements on components of a full custom bipolar process// 1993 \\ | ||
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+ | //A fast high-granularity silicon multiplicity detector for the NA50 experiment at CERN// | ||
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+ | //Radiation damage of silicon strip detectors in the NA50 experiment// | ||
+ | |||
+ | |||
+ | //DEVELOPMENT OF THE SILICON MULTIPLICITY DETECTOR FOR THE NA50 EXPERIMENT AT CERN// | ||
====== The OLA chip ====== | ====== The OLA chip ====== | ||
Technology: SHPi full-custom bipolar process by Tektronix | Technology: SHPi full-custom bipolar process by Tektronix | ||
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+ | //OLA, A low-noise bipolar amplifier for the readout of silicon drift detectors// 1995 \\ | ||
+ | W. Dabrowski, W. Bialas, G. Bonazzola, V. Bonvicini, F. Ceretto, P. Giubellino, M. Idzik, | ||
+ | M. Prest, L. Riccati, N. Zampa | ||
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W. Bialas, G. Bonazzola, W. Bonvicini, L. Casati, F. Ceretto, P. Giubellino, | W. Bialas, G. Bonazzola, W. Bonvicini, L. Casati, F. Ceretto, P. Giubellino, | ||
M. Prest, L. Riccati and N. Zampa | M. Prest, L. Riccati and N. Zampa | ||
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+ | //Design and operation of a fast high-granularity silicon detector system in a high-radiation environment// 1998 | ||
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+ | |||
+ | ====== TERA 1.0 ====== | ||
+ | |||
+ | [[http://totlxl.to.infn.it/NewSite/vlsi_chip.html]] | ||
+ | |||
+ | * CMOS 1.8 um technology | ||
+ | * 14 channels | ||
+ | |||
+ | Several version of the ASIC have been already designed and used since 1996. | ||
+ | |||
+ | //Performances of a VLSI wide dynamic range current-to-frequency | ||
+ | converter for strip ionisation chambers// 1997 \\ | ||
+ | G. Bonazzola, R. Cirio, M. Donetti, F. Marchetto, G. Mazza, C. Peroni and A. Zampieri \\ | ||
====== ====== | ====== ====== | ||
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- | Last update: [[pacher@NOSPAMto.infn.it|Luca Pacher]] - Jun 9, 2013 | + | Last update: [[pacher@NOSPAMto.infn.it|Luca Pacher]] - Jul 23, 2014 |
+ | ~~NOTOC~~ |