Differenze
Queste sono le differenze tra la revisione selezionata e la versione attuale della pagina.
| Entrambe le parti precedenti la revisione Revisione precedente Prossima revisione | Revisione precedente | ||
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vlsi:books [06/08/2013 23:39] pacher |
vlsi:books [20/08/2013 23:04] pacher cancellata |
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| Linea 66: | Linea 66: | ||
| * Y. Taur and T. H. Ning, //Fundamentals of Modern VLSI Devices// | * Y. Taur and T. H. Ning, //Fundamentals of Modern VLSI Devices// | ||
| - | * S.M. Sze and K.K. Ng, //Physics of Semiconductor Devices// | + | * A. S. Grove, //Physics and Technology of Semiconductor Devices// |
| + | * M. Shur, //Physics of Semiconductor Devices// | ||
| + | * S. M. Sze, //Physics of Semiconductor Devices// | ||
| + | * S. M. Sze and M. K. Lee, //Semiconductor Devices, Physics and Technology// | ||
| Linea 74: | Linea 77: | ||
| * Y. Tsividis, //Operation and Modeling of the MOS Transistor// [x] | * Y. Tsividis, //Operation and Modeling of the MOS Transistor// [x] | ||
| * N. Arora, //MOSFET Modeling for VLSI Simulation: Theory And Practice// [x] | * N. Arora, //MOSFET Modeling for VLSI Simulation: Theory And Practice// [x] | ||
| - | * D.P. Foty, //MOSFET Modeling with SPICE: Principles and Practice// | + | * D. P. Foty, //MOSFET Modeling with SPICE: Principles and Practice// |
| + | * E. H. Nicoilian, J. R. Brews, //MOS Physics and Technology// [x] | ||
| ===== SPICE and circuit simulation ===== | ===== SPICE and circuit simulation ===== | ||